Miniaturized waveguide-integrated p-i-n photodetector with 120-GHz bandwidth and high responsivity

Author

Beling, A. ; Bach, H.-G. ; Mekonnen, G.G. ; Kunkel, R. ; Schmidt, D.

Author_Institution

Heinrich-Hertz-Inst., Fraunhofer Inst. for Telecommun., Berlin, Germany

Volume

17

Issue

10

fYear

2005

Firstpage

2152

Lastpage

2154

Abstract

A low-capacitance waveguide-integrated photodiode on InP with a minimized absorber length is presented. In order to maintain a high quantum efficiency, an optical matching layer exploiting mode beating effects is employed. Its optimization leads to a twofold enhanced external responsivity of 0.5 A/W at 1.55-μm wavelength in accordance with simulation. The reduced p-n junction capacitance enables 3-dB bandwidths up to 120 GHz mainly limited due to carrier transit time effects.

Keywords

integrated optics; optical waveguides; p-i-n photodiodes; p-n heterojunctions; photodetectors; 1.55 mum; 120 GHz; InP; absorber length; carrier transit time effects; mode beating; optical matching layer; p-n junction capacitance; quantum efficiency; waveguide-integrated photodiode; Bandwidth; Indium phosphide; Optical coupling; Optical refraction; Optical surface waves; Optical variables control; Optical waveguides; P-n junctions; PIN photodiodes; Photodetectors; Evanescent coupling; InP; multimode waveguide; p-i-n; photodiode (PD);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.856370

Filename

1512303