Title :
Extraction of intrinsic frequency response of p-i-n photodiodes
Author :
Huang, H.P. ; Zhu, N.H. ; Liu, J.
Author_Institution :
State Key Lab. on Integrated Optoelectron. Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
Abstract :
This letter presents a new method for extracting the intrinsic frequency response of a p-i-n photodiode (PD) from the measured frequency response of the PD at different bias voltages. This method is much simpler than the conventional calibration method, since only the measured scattering parameters are required, and there is no need to calibrate the test fixtures and the lightwave source. Experiment shows that the proposed method is as accurate as the calibration method.
Keywords :
calibration; p-i-n photodiodes; semiconductor device measurement; semiconductor device models; intrinsic frequency response; p-i-n photodiodes; scattering parameters; Bandwidth; Calibration; Charge carrier processes; Fixtures; Frequency measurement; Frequency response; PIN photodiodes; Scattering parameters; Testing; Voltage; Curve fitting; S-parameters; intrinsic response; p-i-n photodiode (PD);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.856345
