Title :
A 77-GHz MMIC power amplifier for automotive radar applications
Author :
Hong-Yeh Chang ; Huei Wang ; Yu, M. ; Yonghui Shu
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
4/1/2003 12:00:00 AM
Abstract :
A MMIC 77-GHz two-stage power amplifier (PA) is reported in this letter. This MMIC chip demonstrated a measured small signal gain of over 10 dB from 75 GHz to 80 GHz with 18.5-dBm output power at 1 dB compression. The maximum small signal gain is above 12 dB from 77 to 78 GHz. The saturated output power is better than 21.5 dBm and the maximum power added efficiency is 10% between 75 GHz and 78 GHz. This chip is fabricated using 0.1-μm AlGaAs/InGaAs/GaAs PHEMT MMIC process on 4-mil GaAs substrate. The output power performance is the highest among the reported 4-mil MMIC GaAs HEMT PAs at this frequency and therefore it is suitable for the 77-GHz automotive radar systems and related transmitter applications in W-band.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium arsenide; indium compounds; millimetre wave power amplifiers; radar transmitters; road vehicle radar; 0.1 micron; 10 percent; 12 dB; 4 mil; 77 GHz; AlGaAs-InGaAs-GaAs; AlGaAs/InGaAs/GaAs PHEMT; GaAs; GaAs substrate; MMIC power amplifier; W-band transmitter; automotive radar; output power; power added efficiency; small-signal gain; Automotive engineering; Gain measurement; Gallium arsenide; Indium gallium arsenide; MMICs; Power amplifiers; Power generation; Power measurement; Radar applications; Semiconductor device measurement;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2003.811059
