Title :
A fully integrated, monolithic, cryogenic charge sensitive preamplifier using N-channel JFETs and polysilicon resistors
Author :
Jung, T.S. ; Guckel, H. ; Seefeldt, J. ; Ott, G. ; Ahn, Y.C.
Author_Institution :
Wisconsin Univ., Madison, WI, USA
fDate :
8/1/1994 12:00:00 AM
Abstract :
An N-channel JFET process technology for integrated charge sensitive preamplifiers has been developed. The process integrates multiple pinch-off voltage JFETs fabricated in an n-type epitaxial layer on a low resistivity p-type substrate. The process also incorporates polysilicon resistors integrated on the same die as the JFETs. The optimized polysilicon resistors exhibit 1/f noise nearly as good as metal film resistors at the same current. Results for the integrated amplifier are discussed
Keywords :
counting circuits; junction gate field effect transistors; nuclear electronics; preamplifiers; random noise; 1/f noise; N-channel JFETs; charge sensitive preamplifier; cryogenic; integrated amplifier; low resistivity p-type substrate; monolithic; n-type epitaxial layer; polysilicon resistors; Circuit noise; Cryogenics; Isolation technology; JFETs; Low-frequency noise; Preamplifiers; Resistors; Substrates; Temperature; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
