Title :
A new technique for determining the generation lifetime profile in thin semiconductor films with application to silicon-on-insulator (SOI) substrates
Author :
Chen, H.S. ; Brady, F.T. ; Li, S.S. ; Krull, Wade A.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
A differential technique which uses reverse-biased current-voltage (I-V) and capacitance-voltage (C-V) measurements on a p-n junction or a Schottky barrier diode for determining the generation lifetime profile in thin semiconductor films is discussed. It is shown that the bias-independent current can be eliminated by this differential technique. Furthermore, any error caused by field-enhanced current can be estimated. This method has been used to determine the generation lifetime profile in thin silicon epitaxial film grown on SIMOX substrates.<>
Keywords :
carrier lifetime; electric variables measurement; semiconductor epitaxial layers; semiconductor thin films; semiconductor-insulator boundaries; SIMOX substrates; SOI substrates; Schottky barrier diode; Si epitaxial film; differential technique; field-enhanced current; generation lifetime profile; lifetime measurement; p-n junction; reverse-biased C-V characteristics; reverse-biased I-V characteristics; thin semiconductor films; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; P-n junctions; Schottky barriers; Schottky diodes; Semiconductor diodes; Semiconductor films; Silicon; Substrates;
Journal_Title :
Electron Device Letters, IEEE
