Title :
Circular beam emission from 1.3 mu m InGaAsP strained-multiquantum-well lasers
Author :
Li, G.P. ; Makino, T. ; Evans, J. ; Beckett, D.J.S.
Author_Institution :
Bell-Northern Res. Ltd., Ottawa, Ont., Canada
fDate :
5/1/1992 12:00:00 AM
Abstract :
The beam divergence in the vertical direction from a graded index separate confinement heterostructure (GRINSCH) multiquantum-well (MQW) laser has been studied. It is demonstrated both theoretically and experimentally that a circular beam MQW laser can be produced by choosing appropriate thicknesses for the GRINSCH layers, while maintaining other desired laser characteristics. The beam divergence is found to be more affected by the index change induced by injected carriers than by strain in the MQW active layer. Theoretical results are in good agreement with the measurements for 1.3- mu m InGaAsP strained MQW lasers.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; semiconductor junction lasers; 1.3 micron; GRINSCH; IR; InGaAsP; MQW; beam divergence; circular laser beam emission; graded index separate confinement heterostructure; index change; injected carriers; laser characteristics; multiquantum-well; semiconductors; strained-multiquantum-well lasers; vertical direction; Fiber lasers; Gas lasers; Laser beams; Laser theory; Optical fibers; Optical waveguides; Quantum well devices; Quantum well lasers; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
