Circular beam emission from 1.3 mu m InGaAsP strained-multiquantum-well lasers

Author

Li, G.P. ; Makino, T. ; Evans, J. ; Beckett, D.J.S.

Author_Institution

Bell-Northern Res. Ltd., Ottawa, Ont., Canada

Volume

4

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

419

Lastpage

422

Abstract

The beam divergence in the vertical direction from a graded index separate confinement heterostructure (GRINSCH) multiquantum-well (MQW) laser has been studied. It is demonstrated both theoretically and experimentally that a circular beam MQW laser can be produced by choosing appropriate thicknesses for the GRINSCH layers, while maintaining other desired laser characteristics. The beam divergence is found to be more affected by the index change induced by injected carriers than by strain in the MQW active layer. Theoretical results are in good agreement with the measurements for 1.3- mu m InGaAsP strained MQW lasers.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; semiconductor junction lasers; 1.3 micron; GRINSCH; IR; InGaAsP; MQW; beam divergence; circular laser beam emission; graded index separate confinement heterostructure; index change; injected carriers; laser characteristics; multiquantum-well; semiconductors; strained-multiquantum-well lasers; vertical direction; Fiber lasers; Gas lasers; Laser beams; Laser theory; Optical fibers; Optical waveguides; Quantum well devices; Quantum well lasers; Semiconductor lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.136472

Filename

136472