DocumentCode :
1177931
Title :
Analysis of packaging effects and optimization in inductively degenerated common-emitter low-noise amplifiers
Author :
Sivonen, Pete ; Kangasmaa, Seppo ; Pärssinen, Aarno
Author_Institution :
Nokia Mobile Phones, Helsinki, Finland
Volume :
51
Issue :
4
fYear :
2003
fDate :
4/1/2003 12:00:00 AM
Firstpage :
1220
Lastpage :
1226
Abstract :
The effects of packaging on the performance of inductively degenerated common-emitter low-noise amplifiers (LNAs) are examined and the equations describing the input impedance, transconductance, voltage gain, and noise figure of the packaged amplifier are derived. From the equations, several guidelines for the LNA design are obtained and a systematic approach for the LNA design can be derived. Furthermore, by applying the formulas, the performance of the amplifier can be readily estimated and optimized in the very early stage of the circuit design, immediately as the process data is available. The measurement results of the implemented 0.35-μm SiGe RF front-end with an inductively degenerated common-emitter LNA at 1.575 GHz agree well with calculations and simulations.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; circuit optimisation; equivalent circuits; impedance matching; integrated circuit noise; integrated circuit packaging; network analysis; 0.35 micron; 1.575 GHz; LNA design guidelines; SiGe; SiGe BiCMOS technology; SiGe RF front-end; common-emitter LNAs; inductively degenerated LNA; input impedance; low-noise amplifiers; noise figure; package parasitics; packaged amplifier; packaging effects; transconductance; voltage gain; Equations; Guidelines; Impedance; Low-noise amplifiers; Noise figure; Packaging; Performance gain; Radiofrequency amplifiers; Transconductance; Voltage;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2003.809633
Filename :
1193133
Link To Document :
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