DocumentCode
1177931
Title
Analysis of packaging effects and optimization in inductively degenerated common-emitter low-noise amplifiers
Author
Sivonen, Pete ; Kangasmaa, Seppo ; Pärssinen, Aarno
Author_Institution
Nokia Mobile Phones, Helsinki, Finland
Volume
51
Issue
4
fYear
2003
fDate
4/1/2003 12:00:00 AM
Firstpage
1220
Lastpage
1226
Abstract
The effects of packaging on the performance of inductively degenerated common-emitter low-noise amplifiers (LNAs) are examined and the equations describing the input impedance, transconductance, voltage gain, and noise figure of the packaged amplifier are derived. From the equations, several guidelines for the LNA design are obtained and a systematic approach for the LNA design can be derived. Furthermore, by applying the formulas, the performance of the amplifier can be readily estimated and optimized in the very early stage of the circuit design, immediately as the process data is available. The measurement results of the implemented 0.35-μm SiGe RF front-end with an inductively degenerated common-emitter LNA at 1.575 GHz agree well with calculations and simulations.
Keywords
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; circuit optimisation; equivalent circuits; impedance matching; integrated circuit noise; integrated circuit packaging; network analysis; 0.35 micron; 1.575 GHz; LNA design guidelines; SiGe; SiGe BiCMOS technology; SiGe RF front-end; common-emitter LNAs; inductively degenerated LNA; input impedance; low-noise amplifiers; noise figure; package parasitics; packaged amplifier; packaging effects; transconductance; voltage gain; Equations; Guidelines; Impedance; Low-noise amplifiers; Noise figure; Packaging; Performance gain; Radiofrequency amplifiers; Transconductance; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2003.809633
Filename
1193133
Link To Document