Title :
Optical transitions in strained In/sub 0.53/Ga/sub 0.47/As/In/sub 1-x/Ga/sub x/As quantum wells
Author :
Zucker, J.E. ; Joyner, C.H. ; Dentai, A.G.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
fDate :
5/1/1992 12:00:00 AM
Abstract :
Experimental and theoretical characterization of a series of strained InGaAs/InGaAs quantum well heterostructures is presented. Measurements of X-ray diffraction on calibrated pairs of samples are in excellent agreement with simulated X-ray spectra and provide precise values for compositions and layer thicknesses. With these parameters, the authors have calculated the light- and heavy-hole to electron transition wavelengths, taking into account quantum confinement effects and the influence of strain on the strained-layer bandgap and on the band offset at the lattice-mismatched heterointerface. These calculated bandgaps are in good agreement with the measured room temperature photoluminescence spectra.<>
Keywords :
III-V semiconductors; X-ray diffraction examination of materials; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor quantum wells; semiconductor superlattices; InGaAs-InGaAs; SQW compositions; X-ray diffraction; band offset; calculated bandgaps; calibrated pairs; heavy-hole to electron transition wavelengths; lattice-mismatched heterointerface; layer thicknesses; light-hole; optical transitions; quantum confinement effects; quantum well heterostructures; room temperature photoluminescence spectra; semiconductor superlattices; semiconductors; simulated X-ray spectra; strained quantum wells; strained-layer bandgap; Electrons; Indium gallium arsenide; Optical diffraction; Photonic band gap; Potential well; Quantum mechanics; Temperature measurement; Thickness measurement; Wavelength measurement; X-ray diffraction;
Journal_Title :
Photonics Technology Letters, IEEE
