A time-delay equivalent-circuit model of ultrafast p-i-n photodiodes

Author

Wang, Gang ; Tokumitsu, Tsuneo ; Hanawa, Ikuo ; Yoneda, Yoshihiro ; Sato, Keiji ; Kobayashi, Masahiro

Author_Institution

Fujitsu Quantum Devices Ltd., Yamanashi, Japan

Volume

51

Issue

4

fYear

2003

fDate

4/1/2003 12:00:00 AM

Firstpage

1227

Lastpage

1233

Abstract

A time-delay equivalent-circuit model of ultrafast p-i-n photodiodes (PDs) is proposed to describe the operation at high-input power levels. This model includes both the carrier transit-induced time-delay effect and stored charge effect of p-i-n PDs in high-power operation. These effects were represented as a linear RC circuit and capacitance, respectively, both combined in parallel to a voltage-controlled current source. The validity of this model was confirmed with good curve fitting to the measured optical-frequency responses of an ultrafast side-illuminated p-i-n PD.

Keywords

capacitance; curve fitting; delays; equivalent circuits; frequency response; p-i-n photodiodes; semiconductor device models; capacitance; carrier transit-induced time-delay effect; curve fitting; high-input power levels; high-power operation; linear RC circuit; optical-frequency responses; side-illuminated PIN photodiode; stored charge effect; time-delay equivalent-circuit model; ultrafast p-i-n photodiodes; voltage-controlled current source; High speed optical techniques; Lighting; Linear circuits; Optical receivers; Optical scattering; Optical waveguides; PIN photodiodes; Stimulated emission; Ultrafast optics; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2003.809642

Filename

1193134