DocumentCode
1178011
Title
Pulling the plug on the current drain [threshold switching]
Author
Franz, R.L.
Author_Institution
Motorola Inc., Libertyville, IL, USA
Volume
20
Issue
6
fYear
2004
Firstpage
12
Lastpage
16
Abstract
Power management is one of the main challenges to continued development of large-scale integrated circuits. In particular, the offstate, or standby leakage, is becoming a significant fraction of total power consumption as gate dimensions continue to shrink. A review of the literature identified many possible solutions in the application of threshold-switching devices. This data has apparently never been summarized in one place, suggesting a need for this article. This article discusses the capabilities of classical amorphous semiconductor switches, and more recent advances in silicon, III-V materials, and organic semiconductors that all exhibit threshold-switching properties. Applications and future prospects for the development of more energy-efficient devices are discussed. The long-term vision is that conductors themselves can be engineered to dynamically sense and adapt their conductivity to active or passive states as required.
Keywords
III-V semiconductors; amorphous semiconductors; leakage currents; organic semiconductors; semiconductor switches; III-V materials; classical amorphous semiconductor switches; current drain; energy-efficient devices; large-scale integrated circuits; material selection; organic semiconductors; silicon materials; standby leakage reduction; threshold-switching devices; Amorphous semiconductors; Conducting materials; Energy consumption; Energy management; III-V semiconductor materials; Large scale integration; Organic materials; Plugs; Power semiconductor switches; Silicon;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/MCD.2004.1364770
Filename
1364770
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