BJT-BJT, FET-BJT, and FET-FET

Author

Roozbahani, R.G.

Author_Institution

K.N. Toosi Univ. of Technol., Tehran, Iran

Volume

20

Issue

6

fYear

2004

Firstpage

17

Lastpage

22

Abstract

Cascode amplifiers have three configurations: bipolar junction transistor-bipolar junction transistor (BJT-BJT), field-effect transistor (FET)-BJT, and FET-FET. Although the high-frequency behaviors of these configurations are not the same in practice, in most textbooks only the BJT-BJT configuration is analyzed. High-frequency response of the BJT-BJT cascode amplifier is limited by three factors: 1) the source impedance or the output impedance of the previous stage; 2) the output impedance or the load of the amplifier; and 3) the dc bias current of the amplifier. In order to cope with these limitations, this article presents a modified cascode amplifier. In this new configuration, only a single transistor is added to the elements of each of the aforementioned cascode amplifiers. Corresponding to each configuration, a modified configuration results in greater or approximately equal gain and higher bandwidth.

Keywords

amplifiers; bipolar transistors; field effect transistors; BJT-BJT configuration; FET-BJT configuration; FET-FET configuration; amplifier load; bipolar junction transistor; cascode amplifiers; dc bias current; field effect transistor; figh-frequency response; output impedance; single transistor; source impedance; Bandwidth; Capacitance; Character generation; Cutoff frequency; Equivalent circuits; FETs; Roentgenium; Transfer functions; Voltage;

fLanguage

English

Journal_Title

Circuits and Devices Magazine, IEEE

Publisher

ieee

ISSN

8755-3996

Type

jour

DOI

10.1109/MCD.2004.1364771

Filename

1364771