A 622 Mb/s monolithically integrated InGaAs/InP four-channel p-i-n FET receiver array

Author

Akahori, Y. ; Ikeda, M. ; Uchida, N. ; Yoshida, J. ; Suzuki, Y.

Author_Institution

NTT Opto-electron. Lab., Kanagawa Pref., Japan

Volume

4

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

470

Lastpage

472

Abstract

The authors describe the sensitivity and crosstalk characteristics of a long-wavelength monolithically integrated four-channel photoreceiver array. This receiver consists of 4 p-i-n PDs, 24 JFETs, and 28 level-shift diodes. The device is fabricated using MOVPE-grown crystals and a Be ion implantation technique. The receiver chip demonstrates a sensitivity of between -30.6 and -31.4 dBm, and crosstalk below -20 dB over its operating frequency range. Sensitivity deterioration due to crosstalk is demonstrated and is shown to be a critical factor in system performance. The crosstalk is mainly due to parasitic inductances on the external power supply circuits.<>

Keywords

III-V semiconductors; crosstalk; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; p-i-n diodes; photodiodes; receivers; sensitivity; 622 Mbit/s; Be ion implantation technique; InGaAs-InP; JFETs; MOVPE-grown crystals; crosstalk; external power supply circuits; field effect transistors; four-channel p-i-n FET receiver array; level-shift diodes; long-wavelength; monolithically integrated; operating frequency range; parasitic inductances; photodiodes; photoreceiver array; phototransistors; receiver chip; semiconductors; sensitivity; system performance; Crosstalk; Crystals; Frequency; Indium gallium arsenide; Indium phosphide; Ion implantation; JFETs; P-i-n diodes; PIN photodiodes; System performance;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.136490

Filename

136490