Analysis of a resonant-cavity enhanced GaAs/AlGaAs MSM photodetector

Author

Li, Z.-M. ; Landheer, D. ; Veilleux, M. ; Conn, D.R. ; Surridge, R. ; Xu, J.M. ; McDonald, R.I.

Author_Institution

Nat. Res. Council of Canada, Ottawa, Ont., Canada

Volume

4

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

473

Lastpage

476

Abstract

The authors have developed a 2-D device simulator for heterostructure metal-semiconductor-metal (MSM) photodetectors. They have incorporated a model of multilayer optics into the simulator and used it to analyze the temporal response of a resonant-cavity enhanced heterostructure with a confining buffer layer and a distributed Bragg reflector (DBR). The authors show that through fine tuning the layer thicknesses, optical resonance enhancement of the light absorption can be obtained.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; metal-semiconductor-metal structures; optical resonators; photodetectors; photodiodes; 2D device simulator; GaAs-AlGaAs; MSM photodetector; confining buffer layer; distributed Bragg reflector; heterostructure metal-semiconductor-metal; layer thicknesses; light absorption; multilayer optics; optical resonance enhancement; resonant-cavity enhanced heterostructure; semiconductors; temporal response; Absorption; Analytical models; Buffer layers; Distributed Bragg reflectors; Gallium arsenide; Nonhomogeneous media; Optical buffering; Optical tuning; Photodetectors; Resonance;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.136491

Filename

136491