Active optical NOR logic devices using surface-emitting lasers

Author

Lee, Y.H. ; Song, J.I. ; Kim, M.S. ; Shim, C.S. ; Tell, B. ; Leibenguth, R.E.

Author_Institution

Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea

Volume

4

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

479

Lastpage

482

Abstract

Cascadable active laser logic devices are described, demonstrating NOR and INVERTER functions with a negative optical gain of five. The surface-emitting laser logic device consists of an AlGaAs superlattice surface-emitting laser discretely connected to an AlGaAs heterojunction phototransistor in parallel. The optical logic output of 0.5 mW is controlled off with 100 mu W incident power (44 mu W absorbed) on the heterojunction phototransistor part of the device.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; optical logic; phototransistors; semiconductor laser arrays; 0.5 mW; 100 muW; 44 muW; AlGaAs diode lasers; AlGaAs heterojunction phototransistor; AlGaAs superlattice surface-emitting laser; INVERTER functions; absorbed power; active laser logic devices; active optics; cascadable logic; incident power; negative optical gain; optical NOR logic devices; optical logic output; parallel optical interconnections; semiconductor superlattices; semiconductors; surface-emitting lasers; Logic devices; Optical arrays; Optical devices; Optical modulation; Optical saturation; Optical sensors; Optical superlattices; Phased arrays; Surface emitting lasers; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.136493

Filename

136493