Title :
A 10-bit 50 MS/s Pipelined ADC With Capacitor-Sharing and Variable-
Opamp
Author :
Lee, Byung-Geun ; Tsang, Robin M.
Author_Institution :
Qualcomm Inc., San Diego, CA
fDate :
3/1/2009 12:00:00 AM
Abstract :
A pipelined analog-to-digital converter (ADC) architecture which is suitable for low power and small area is presented. The prototype ADC achieves 10-bit resolution with only two opamps by removing a front-end sample-and-hold amplifier (SHA) and sharing an opamp between two successive pipeline stages. The errors from the absence of SHA and opamp-sharing are greatly reduced by the proposed techniques and circuits. Further reduction of power and area is achieved by using a capacitor-sharing technique and variable- variable-gm opamp. The ADC is implemented in 0.18 mum CMOS technology and occupies a die area of 0.86 mm2. The differential and integral nonlinearity of the ADC are less than 0.39 LSB and 0.81 LSB, respectively, at full sampling rate. The ADC achieves 56.2 dB signal-to-noise plus distortion ratio, 72.7 dB spurious free dynamic range, -66.2 dB total harmonic distortion, 9.03 effective number of bits for a Nyquist input at full sampling rate, and consumes 12 mW from a 1.8 V supply.
Keywords :
CMOS integrated circuits; Nyquist criterion; analogue-digital conversion; capacitors; operational amplifiers; pipeline processing; system-on-chip; CMOS technology; Nyquist input; SoC applications; analog-to-digital converter architecture; capacitor-sharing technique; distortion ratio; front-end sample-and-hold amplifier; integral nonlinearity; least significant bit; pipelined ADC; power 12 mW; signal-to-noise ratio; size 0.18 mum; spurious free dynamic range; successive pipeline stages; total harmonic distortion; variable-gm opamp; voltage 1.8 V; Analog-digital conversion; CMOS technology; Circuits; Dynamic range; Image sampling; Pipelines; Prototypes; Sampling methods; Signal sampling; Total harmonic distortion; Capacitor-sharing; low power; opamp-sharing; pipelined ADC; small size; variable- $g_{m}$ opamp;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2009.2013761