Title :
Performance of In0.53Ga0.47As and InP junction field-effect transistors for optoelectronic integrated circuits. I. Device analysis
Author :
Lo, D.C.W. ; Forrest, S.R.
Author_Institution :
Univ. of Southern California, Los Angeles, CA, USA
fDate :
6/1/1989 12:00:00 AM
Abstract :
The authors have developed an analytical model to study In0.53Ga0.47As and InP junction field-effect transistors (JFETs) for use in InP-based optoelectronic integrated circuits (OEICs). This model includes the effects of channel resistance and band-to-band tunneling. The agreement between the calculations and experimental results supports the validity of the model. The authors discuss the optimum design for these JFETs and compare their performance quantitatively. In order to prevent device performance from being degraded by the effects of tunneling, the optimum channel dopings of In 0.53Ga0.47As and InP JFETs are found to be 7×1016 and 5×1017 cm-3, respectively. In0.53Ga0.47As JFETs not operated in the tunneling regime show at least a 40% higher efficiency than InP JFETs in terms of the power dissipated per transconductance. The authors conclude that In0.53Ga0.47As JFETs are well suited for very-high-density monolithic integration, where power efficiency must be high
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; junction gate field effect transistors; semiconductor device models; tunnelling; In0.53Ga0.47As; InP; InP-based OEICs; JFET; band-to-band tunneling; channel resistance; device performance; junction field-effect transistors; optimum channel dopings; optoelectronic integrated circuits; power dissipated per transconductance; power efficiency; semiconductor; tunneling regime; very-high-density monolithic integration; Analytical models; Degradation; Doping; FETs; Indium phosphide; Integrated circuit modeling; JFETs; Semiconductor process modeling; Transconductance; Tunneling;
Journal_Title :
Lightwave Technology, Journal of
