A High-Speed Inductive-Coupling Link With Burst Transmission

Author

Miura, Noriyuki ; Kohama, Yoshinori ; Sugimori, Yasfumi ; Ishikuro, Hiroki ; Sakurai, Takayasu ; Kuroda, Tadahiro

Author_Institution

Dept. of Electr. Eng., Keio Univ., Yokohama

Volume

44

Issue

3

fYear

2009

fDate

3/1/2009 12:00:00 AM

Firstpage

947

Lastpage

955

Abstract

A high-speed inductive-coupling link is presented. It communicates at a data rate of 11 Gb/s for a communication distance of 15 mum in 180 nm CMOS. The data rate is 11times higher than previous inductive-coupling links. The communication distance is 5times longer than a capacitive-coupling link for the same data rate, bit error rate, and layout area. Burst transmission utilizing the high-speed inductive-coupling link is also presented. Multi-bit data links are multiplexed into a single burst data link. It reduces layout area by a factor of three in 180 nm CMOS and a factor of nine in 90 nm CMOS.

Keywords

CMOS integrated circuits; coupled circuits; integrated circuit interconnections; burst transmission; high-speed inductive-coupling link; multi-bit data links; Bonding; CMOS technology; Chip scale packaging; Costs; Coupling circuits; Fabrication; Integrated circuit interconnections; Moore´s Law; Power system interconnection; Through-silicon vias; Burst transmission; data link; high speed; inductive coupling; three dimensional;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2008.2012365

Filename

4787576