Millimeter-wave power performance of ion-implanted In/sub x/Ga/sub (1-x)/As on GaAs metal semiconductor field-effect transistors

Author

Feng, M. ; Lau, C.L. ; Brusenback, P. ; Kushner, L.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

2

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

225

Lastpage

227

Abstract

Millimeter-wave power performance achieved by ion-implanted InGaAs-GaAs MESFETs with a gate length of 0.25 mu m is described. When a device with a gate width of 150 mu m was measured at 22 GHz, an output power of 95 mW, a power-added efficiency of 33%, and an associated gain of 7.3 dB were observed. At an output power of 93 mW, a power-added efficiency of 25% and an associated gain of 4 dB were obtained at 44 GHz. When a device with a gate width of 200 mu m was measured at 60 GHz, an output power of 121 mW with 3-dB associated gain and 13% power-added efficiency were observed.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; ion implantation; solid-state microwave devices; 0.25 micron; 121 mW; 13 percent; 150 micron; 200 micron; 22 GHz; 25 percent; 3 dB; 33 percent; 4 dB; 44 GHz; 60 GHz; 7.3 dB; 93 mW; 95 mW; GaAs; InGaAs-GaAs; MESFETs; MM-wave power performance; gain; gate width; ion implantation; output power; power-added efficiency; Gain; Gallium arsenide; Indium gallium arsenide; MESFETs; Millimeter wave communication; Millimeter wave transistors; Power amplifiers; Power generation; Power measurement; Voltage;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.136513

Filename

136513