Title :
A 33.6-to-33.8 Gb/s Burst-Mode CDR in 90 nm CMOS Technology
Author :
Cho, Lan-Chou ; Lee, Chihun ; Hung, Chao-Ching ; Liu, Shen-Iuan
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
fDate :
3/1/2009 12:00:00 AM
Abstract :
A 33.6-33.8 Gb/s burst-mode clock/data recovery circuit (BMCDR) is presented in this paper. To reduce the data jitter and generate the high-frequency output clock, the LC gated voltage-controlled oscillator is presented. To receive and transmit the broadband data, a wideband input matching circuit and a wideband data buffer are presented, respectively. The phase selector is proposed to overcome the false phase lock due to the full-rate operation. This proposed BMCDR has been fabricated in a 90 nm CMOS process. The measured peak-to-peak and rms jitters for the recovered data are 7.56 ps and 1.15 ps, respectively, for a 33.72 Gb/s, 2 11 -1 PRBS. The measured bit error rate is less than 10-8 for a 33.72 Gb/s, 27 -1 PRBS. It consumes 73 mW without buffers from a 1.2 V supply.
Keywords :
CMOS integrated circuits; clock and data recovery circuits; voltage-controlled oscillators; CMOS technology; LC gated voltage-controlled oscillator; bit error rate; bit rate 33.6 Gbit/s to 33.8 Gbit/s; burst-mode clock-data recovery circuit; data jitter; high-frequency output clock; phase selector; power 73 mW; size 90 nm; time 1.15 ps; time 7.56 ps; voltage 1.2 V; wideband data buffer; wideband input matching circuit; Bit error rate; CMOS process; CMOS technology; Circuits; Clocks; Computer buffers; Impedance matching; Jitter; Voltage-controlled oscillators; Wideband; Burst-mode clock/data recovery; gated voltage-controlled oscillator; passive optical networks; phase-locked loop;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2008.2012326