DocumentCode
1178664
Title
Monolithic InP HEMT V-band low-noise amplifier
Author
Webster, Richard T. ; Slobodnik, Andrew J., Jr. ; Roberts, George A.
Author_Institution
Rome Lab., Hanscom AFB, MA, USA
Volume
2
Issue
6
fYear
1992
fDate
6/1/1992 12:00:00 AM
Firstpage
236
Lastpage
238
Abstract
A fully monolithic indium phosphide high electron mobility transistor (InP HEMT) two-stage low-noise amplifier has achieved a noise figure, of 4.2 dB with an associated gain of 15.25 dB over the band from 56 to 60 GHz. Noise matching and bias decoupling are accomplished on-chip. The successful performance of the amplifier is credited to accurate characterization of the active and passive devices that make up the circuit.<>
Keywords
III-V semiconductors; MMIC; field effect integrated circuits; indium compounds; microwave amplifiers; 15.25 dB; 4.2 dB; 56 to 60 GHz; InP; bias decoupling; gain; monolithic HEMT V-band amplifier; noise figure; noise matching; two-stage low-noise amplifier; Circuit noise; Gain; HEMTs; Impedance matching; Indium phosphide; Low-noise amplifiers; MODFETs; Microstrip; Noise figure; Scattering parameters;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.136517
Filename
136517
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