DocumentCode :
1178752
Title :
A CMOS temperature-compensated current reference
Author :
Sansen, Willy M. ; Eynde, Frank Op´t ; Steyaert, Michiel
Author_Institution :
Dept. Elektrotechniek, Katholiek Univ. Leuven, Heverlee, Belgium
Volume :
23
Issue :
3
fYear :
1988
fDate :
6/1/1988 12:00:00 AM
Firstpage :
821
Lastpage :
824
Abstract :
A temperature-compensated current reference for CMOS integrated circuits based on a MOSFET as current-defining element, is described. To minimize the mass-production cost, it uses no external components nor trimming procedures. Comparison with classical current references with a resistor as a current-defining element shows a considerable improvement of the relative tolerance on the current. Theoretical expressions are presented and compared with experimental results from an integrated prototype. For devices from the same batch, the standard deviation is measured to be 2.5%, and the temperature dependence is 3% from 0 to 80 degrees C. From theoretical equations, the standard deviation of devices from different batches is expected to be about 15%.<>
Keywords :
CMOS integrated circuits; compensation; linear integrated circuits; reference circuits; CMOS integrated circuits; MOSFET current defining element; temperature-compensated current reference; CMOS integrated circuits; Costs; Integrated circuit measurements; MOSFET circuits; Measurement standards; Optimized production technology; Prototypes; Resistors; Temperature dependence; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.324
Filename :
324
Link To Document :
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