DocumentCode :
1179023
Title :
Gate-length dependence of DC and microwave properties of submicrometer In/sub 0.53/Ga/sub 0.47/As HIGFETs
Author :
Feuer, Mark D. ; Tennant, D.M. ; Kuo, J.M. ; Shunk, S.C. ; Tell, B. ; Chang, Tao-yuan
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Volume :
10
Issue :
2
fYear :
1989
Firstpage :
70
Lastpage :
72
Abstract :
In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP heterostructure insulated-gate field-effect transistors (HIGFETs) with gate lengths from 1.1 and 0.3 mu m have been fabricated, and their electrical performance is characterized at DC and microwave frequencies. The refractory-gate self-aligned process, applied to devices with In/sub 0.53/Ga/sub 0.47/As channels, yields an unprecedented combination of very-high speed and excellent uniformity. HIGFETs with L/sub g/=0.6 mu m showed average peak transconductance g/sub m/ of 528 mS/mm and unity-current-gain cutoff frequency f/sub t/ of 50 GHz. The uniformity of g/sub m/ was better than 1%, and the voltage of the g/sub m/ peak was uniform to +or-30 mV. HIGFETs with L/sub g/=0.3 mu m showed f/sub 1/ up to 63 GHz, but suffered from serious short-channel effect, due to excessive thickness of the InGaAs channel layer. A self-aligned technique for gate resistance reduction is shown to substantially improve microwave power gain.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; solid-state microwave devices; 0.3 to 1.1 micron; 50 GHz; 528 mS; 63 GHz; DC performance; In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As-InP; gate lengths; gate resistance reduction; microwave power gain; microwave properties; peak transconductance; refractory-gate self-aligned process; short-channel effect; submicron HIGFETs; unity-current-gain cutoff frequency; HEMTs; Indium gallium arsenide; Indium phosphide; MODFET circuits; MODFET integrated circuits; Microwave devices; Microwave frequencies; Molecular beam epitaxial growth; Substrates; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.32432
Filename :
32432
Link To Document :
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