• DocumentCode
    1179038
  • Title

    High-gain pseudomorphic InGaAs base ballistic hot-electron device

  • Author

    Seo, K. ; Heiblum, Mordehai ; Knoedler, C.M. ; Oh, J.E. ; Pamulapati, J. ; Bhattacharya, Pallab

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    10
  • Issue
    2
  • fYear
    1989
  • Firstpage
    73
  • Lastpage
    75
  • Abstract
    A high-gain ballistic hot-electron device is described. The GaAs-AlGaAs heterostructure device, with a 21-mm-thick pseudomorphic In/sub 0.12/Ga/sub 0.88/As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valley limited the maximum gain. The Gamma -L valley separation in the strained In/sub 0.12/Ga/sub 0.88/As was estimated to be about 380 meV.<>
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; hot electron transistors; indium compounds; GaAs-AlGaAs-InGaAs; Gamma -L valley separation; THETA; current gain; high-gain ballistic hot-electron device; Ballistic transport; Doping; Electrons; Gallium arsenide; Indium gallium arsenide; Leakage current; Scattering; Substrates; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.32433
  • Filename
    32433
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1179038