Title :
High-gain pseudomorphic InGaAs base ballistic hot-electron device
Author :
Seo, K. ; Heiblum, Mordehai ; Knoedler, C.M. ; Oh, J.E. ; Pamulapati, J. ; Bhattacharya, Pallab
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A high-gain ballistic hot-electron device is described. The GaAs-AlGaAs heterostructure device, with a 21-mm-thick pseudomorphic In/sub 0.12/Ga/sub 0.88/As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valley limited the maximum gain. The Gamma -L valley separation in the strained In/sub 0.12/Ga/sub 0.88/As was estimated to be about 380 meV.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; hot electron transistors; indium compounds; GaAs-AlGaAs-InGaAs; Gamma -L valley separation; THETA; current gain; high-gain ballistic hot-electron device; Ballistic transport; Doping; Electrons; Gallium arsenide; Indium gallium arsenide; Leakage current; Scattering; Substrates; Tunneling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
