• DocumentCode
    1179046
  • Title

    Hot carrier degradation of n-channel MOSFETs characterized by a gated-diode measurement technique

  • Author

    GieBel, T. ; Goser, Karl

  • Author_Institution
    Bauelemente der Elecktrotech., Dortmund Univ., West Germany
  • Volume
    10
  • Issue
    2
  • fYear
    1989
  • Firstpage
    76
  • Lastpage
    78
  • Abstract
    The gated-diode measurement technique characterizes the physical damage induced in n-channel MOSFETs during hot-carrier stress. The results show that the gate oxide in the channel region is not affected by hot-carrier stress. The most severe damage is located in the gate oxide above the drain-gate overlap region. Furthermore, the measurements show that the density of generation centers in the substrate is increased after hot-carrier stress.<>
  • Keywords
    hot carriers; insulated gate field effect transistors; semiconductor device testing; density of generation centers; drain-gate overlap region; gate oxide; gated-diode measurement technique; hot-carrier stress; n-channel MOSFETs; physical damage; Degradation; Density measurement; Diodes; Heating; Hot carriers; MOSFETs; Measurement techniques; P-n junctions; Stress measurement; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.32434
  • Filename
    32434
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1179046