DocumentCode :
1179065
Title :
Prediction of magnetic flux-controlled gate voltage in superconducting field-effect transistors
Author :
Glasser, Lance A.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Volume :
10
Issue :
2
fYear :
1989
Firstpage :
82
Lastpage :
84
Abstract :
The undirectional model to the superconducting field-effect transistor (SFET) is shown to be thermodynamically unsound. A gate voltage which is controlled by the magnetic flux difference in a Josephson weak link is predicted by energy arguments. For a passive SFET model to be consistent with recent experimental observations of a charge-controlled critical current, a back-reaction from the DC drain-to-source flux (phase difference) to the DC gate voltage is required. As this effect is important in large devices and occurs at V/sub DS/=0, it does not appear to be directly related to charge-space energy bands or quasiparticle interference.<>
Keywords :
field effect transistors; semiconductor device models; superconducting junction devices; DC drain-to-source flux; Josephson weak link; charge-controlled critical current; energy arguments; magnetic flux-controlled gate voltage; passive SFET model; phase difference; superconducting field-effect transistors; undirectional model; Critical current; FETs; Integrated circuit measurements; Laboratories; MOSFETs; Magnetic flux; Maxwell equations; Superconducting magnets; Voltage control;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.32436
Filename :
32436
Link To Document :
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