An n-channel BICFET in the GaAs/AlGaAs material system

Author

Taylor, Geoffrey W. ; Kiely, P.A. ; Izabelle, A. ; Crawford, D.L. ; Lebby, M.S. ; Chang, Tao-yuan ; Tell, B. ; Goebeler, K. Brown ; Simmons, J.G.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

10

Issue

2

fYear

1989

Firstpage

88

Lastpage

90

Abstract

An n-channel BICFET (bipolar inversion channel FET) and an HFET (heterojunction FET) have been fabricated for the first time by MBE (molecular-beam epitaxy) growth with the charge sheet located on the wide-bandgap side of the heterointerface. This implementation is most desirable because of the potential for low resistance, high gain, and a temperature-stable structure. The HFET associated with the BICFET has a positive threshold, indicating that no channel exists in the equilibrium state.<>

Keywords

III-V semiconductors; aluminium compounds; bipolar transistors; field effect transistors; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; GaAs-AlGaAs; HFET; MBE; bipolar inversion channel FET; charge sheet; heterojunction FET; high gain; low resistance; n-channel BICFET; positive threshold; temperature-stable structure; Current density; Gallium arsenide; HEMTs; Indium compounds; MODFETs; Photonic band gap; Scattering; Semiconductor materials; Sheet materials;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.32438

Filename

32438