Title :
Design, fabrication, and characterization of striped channel HEMT´s
Author :
Bollaert, Sylvain ; Legris, P. ; Delos, Elisabeth ; Cappy, Alain ; Debray, P. ; Blanchet, J.
Author_Institution :
IEMN-DHS, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
fDate :
10/1/1994 12:00:00 AM
Abstract :
A theoretical and experimental study of striped channel HEMT´s is presented in this paper. The source to drain region of striped channel HEMT´s is divided into a number of narrow conducting channels. Hence, the control of the charges by the Schottky gate is two-dimensional, which improves the transconductance value. Striped channel HEMT´s have been successfully realized and characterized. The experimental results agree well with the theoretical ones. The structure of an optimized device is then proposed
Keywords :
Schottky gate field effect transistors; high electron mobility transistors; Schottky gate; design; fabrication; optimized device; striped channel HEMTs; transconductance; two-dimensional charge control; Electrons; FETs; Fabrication; Gallium arsenide; HEMTs; Physics; Semiconductor device modeling; Topology; Transconductance; Wires;
Journal_Title :
Electron Devices, IEEE Transactions on
