• DocumentCode
    1179683
  • Title

    Design, fabrication, and characterization of striped channel HEMT´s

  • Author

    Bollaert, Sylvain ; Legris, P. ; Delos, Elisabeth ; Cappy, Alain ; Debray, P. ; Blanchet, J.

  • Author_Institution
    IEMN-DHS, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
  • Volume
    41
  • Issue
    10
  • fYear
    1994
  • fDate
    10/1/1994 12:00:00 AM
  • Firstpage
    1716
  • Lastpage
    1724
  • Abstract
    A theoretical and experimental study of striped channel HEMT´s is presented in this paper. The source to drain region of striped channel HEMT´s is divided into a number of narrow conducting channels. Hence, the control of the charges by the Schottky gate is two-dimensional, which improves the transconductance value. Striped channel HEMT´s have been successfully realized and characterized. The experimental results agree well with the theoretical ones. The structure of an optimized device is then proposed
  • Keywords
    Schottky gate field effect transistors; high electron mobility transistors; Schottky gate; design; fabrication; optimized device; striped channel HEMTs; transconductance; two-dimensional charge control; Electrons; FETs; Fabrication; Gallium arsenide; HEMTs; Physics; Semiconductor device modeling; Topology; Transconductance; Wires;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.324579
  • Filename
    324579
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1179683