Title :
Field-plated 0.25 μm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 9.1 W/mm at 18 GHz
Author :
Kumar, V. ; Chen, G. ; Guo, S. ; Peres, B. ; Eliasevich, I. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
fDate :
9/15/2005 12:00:00 AM
Abstract :
MOCVD-grown field-plated 0.25 μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) have been fabricated on 6H-SiC substrates. The devices exhibited maximum drain current density as high as 1.42 A/mm, peak extrinsic transconductance of 437 mS/mm, unity current gain cutoff frequency (fT) of 41 GHz, and maximum frequency of oscillation (fmax) of 63 GHz. At 18 GHz, a continuous-wave output power density of 9.1 W/mm with power-added-efficiency (PAE) of 23.7% was obtained, yielding the highest reported power performance of AlGaN/GaN HEMTs at 18 GHz.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; current density; gallium compounds; high electron mobility transistors; microwave field effect transistors; silicon compounds; wide band gap semiconductors; 0.25 micron; 18 GHz; 41 GHz; 63 GHz; AlGaN-GaN; MOCVD-grown HEMT; current density; field-plated HEMT; high electron mobility transistors; maximum oscillation frequency; peak extrinsic transconductance; unity current gain cutoff frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20052051
