DocumentCode
1179692
Title
GaN enhancement/depletion-mode FET logic for mixed signal applications
Author
Micovic, M. ; Tsen, T. ; Hu, M. ; Hashimoto, P. ; Willadsen, P.J. ; Milosavljevic, I. ; Schmitz, A. ; Antcliffe, M. ; Zhender, D. ; Moon, J.S. ; Wong, W.-S. ; Chow, D.
Author_Institution
HRL Labs. LLC, Malibu, CA, USA
Volume
41
Issue
19
fYear
2005
fDate
9/15/2005 12:00:00 AM
Firstpage
1081
Lastpage
1083
Abstract
The first demonstration of enhancement/depletion (E/D)-mode integrated digital circuits in GaN technology is reported. Specifically, the performance of static divide by 2 circuit implemented in direct coupled FET logic and of a 23-stage ring oscillator, implemented in super-buffered FET logic are presented. The reported E/D technology is potentially suitable for fabrication of mixed signal GaN circuits.
Keywords
III-V semiconductors; field effect transistor circuits; gallium compounds; logic circuits; mixed analogue-digital integrated circuits; wide band gap semiconductors; GaN; depletion-mode FET logic; direct coupled FET logic; enhancement-mode FET logic; integrated digital circuits; mixed signal applications; ring oscillator;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20052263
Filename
1512770
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