Title :
GaN enhancement/depletion-mode FET logic for mixed signal applications
Author :
Micovic, M. ; Tsen, T. ; Hu, M. ; Hashimoto, P. ; Willadsen, P.J. ; Milosavljevic, I. ; Schmitz, A. ; Antcliffe, M. ; Zhender, D. ; Moon, J.S. ; Wong, W.-S. ; Chow, D.
Author_Institution :
HRL Labs. LLC, Malibu, CA, USA
fDate :
9/15/2005 12:00:00 AM
Abstract :
The first demonstration of enhancement/depletion (E/D)-mode integrated digital circuits in GaN technology is reported. Specifically, the performance of static divide by 2 circuit implemented in direct coupled FET logic and of a 23-stage ring oscillator, implemented in super-buffered FET logic are presented. The reported E/D technology is potentially suitable for fabrication of mixed signal GaN circuits.
Keywords :
III-V semiconductors; field effect transistor circuits; gallium compounds; logic circuits; mixed analogue-digital integrated circuits; wide band gap semiconductors; GaN; depletion-mode FET logic; direct coupled FET logic; enhancement-mode FET logic; integrated digital circuits; mixed signal applications; ring oscillator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20052263
