Title :
Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation
Author :
Zhang, M. ; Knoch, J. ; Zhao, Q.T. ; Fox, A. ; Lenk, St. ; Mantl, S.
Author_Institution :
Inst. for Thin Films & Interfaces, Julich, Germany
fDate :
9/15/2005 12:00:00 AM
Abstract :
Temperature dependent experimental results of Schottky-barrier MOSFETs with dopant segregation using fully nickel silicided source and drain contacts are presented. The dependence of the extracted effective Schottky-barrier height (SBH) on the gate voltage clearly shows that use of dopant segregation lowers the effective SBH for electron injection significantly from 0.64 eV down to ∼0.1 eV.
Keywords :
MOSFET; Schottky barriers; charge injection; cryogenic electronics; semiconductor doping; silicon-on-insulator; NiSi; SOI-MOSFET; Schottky barrier height; dopant segregation; electron injection; fully nickel silicided drain contacts; fully nickel silicided source contacts; gate voltage; low temperature measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20052665
