Towards high-performance nitride lasers at 1.3 μm and beyond

Author

Pessa, M. ; Peng, C.S. ; Jouhti, T. ; Pavelescu, E.-M. ; Li, W. ; Karirinne, S. ; Liu, H. ; Okhotnikov, O.

Author_Institution

Optoelectronics Res. Centre, Tampere Univ. of Technol., Finland

Volume

150

Issue

1

fYear

2003

fDate

2/1/2003 12:00:00 AM

Firstpage

12

Lastpage

21

Abstract

The paper reports on recent observations of structural and optical properties of long-wavelength GaInNAs/GaAs quantum well semiconductors and the performance features of GaInNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) and edge-emitting lasers. The results obtained indicate that GaInNAs VCSELs and possibly edge-emitting lasers will complement, or even replace, dominant InP-based light sources in 1.3-μm short-haul data transmission systems. Whether GaAs lasers will ever become competitive with InP lasers at 1.4-1.6 μm is an open issue at the moment. Long-wavelength GaAs technology still has some distance to go in addressing remaining concerns; however, the authors believe that it is most likely to bring about the long-awaited breakthrough in component technology for optical fibre networks.

Keywords

data communication; infrared sources; laser transitions; optical communication equipment; optical fibre networks; quantum well lasers; surface emitting lasers; 1.3 micron; 1.4 to 1.6 micron; GaAs lasers; GaInNAs; GaInNAs VCSELs; GaInNAs-GaAs; GaInNAs/GaAs vertical-cavity surface- emitting lasers; InP; InP lasers; VCSELs; component technology; dominant InP-based light sources; edge-emitting lasers; high-performance nitride lasers; long-wavelength GaInNAs/GaAs quantum well semiconductors; optical fibre networks; optical properties; short-haul data transmission systems; structural properties;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20030185

Filename

1193686