• DocumentCode
    1179731
  • Title

    Sb-based HEMTs with InAlSb/InAs heterojunction

  • Author

    Papanicolaou, N.A. ; Bennett, B.R. ; Boos, J.B. ; Park, D. ; Bass, R.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    41
  • Issue
    19
  • fYear
    2005
  • fDate
    9/15/2005 12:00:00 AM
  • Firstpage
    1088
  • Lastpage
    1089
  • Abstract
    Antimonide-based HEMTs with a 0.35 μm gate length have been fabricated with an InAlSb/InAs heterojunction. The new Te-doped MBE material, which does not contain highly-reactive AlSb, exhibits a Hall mobility of 23,500 cm2/V-s and a sheet density of 1.7×1012 cm-2. The devices have a DC transconductance of 1000 mS/mm and an fTLg product of 32 GHz-μm at VDS=0.35 V.
  • Keywords
    Hall mobility; III-V semiconductors; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor heterojunctions; 0.35 V; 0.35 micron; Hall mobility; III-V semiconductors; InAlSb-InAs; Te-doped MBE material; antimonide-based HEMT; high electron mobility transistors; molecular beam epitaxial growth; semiconductor heterojunctions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20052105
  • Filename
    1512774
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1179731