Title :
Sb-based HEMTs with InAlSb/InAs heterojunction
Author :
Papanicolaou, N.A. ; Bennett, B.R. ; Boos, J.B. ; Park, D. ; Bass, R.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
9/15/2005 12:00:00 AM
Abstract :
Antimonide-based HEMTs with a 0.35 μm gate length have been fabricated with an InAlSb/InAs heterojunction. The new Te-doped MBE material, which does not contain highly-reactive AlSb, exhibits a Hall mobility of 23,500 cm2/V-s and a sheet density of 1.7×1012 cm-2. The devices have a DC transconductance of 1000 mS/mm and an fTLg product of 32 GHz-μm at VDS=0.35 V.
Keywords :
Hall mobility; III-V semiconductors; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor heterojunctions; 0.35 V; 0.35 micron; Hall mobility; III-V semiconductors; InAlSb-InAs; Te-doped MBE material; antimonide-based HEMT; high electron mobility transistors; molecular beam epitaxial growth; semiconductor heterojunctions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20052105
