Magneto-tunnelling spectroscopy of nitrogen clusters in Ga(AsN) alloys

Author

Neumann, A. ; Patanè, A. ; Eaves, L. ; Belyaev, A.E. ; Gollub, D. ; Forchel, A. ; Kamp, M.

Author_Institution

Sch. of Phys. & Astron., Nottingham Univ., UK

Volume

150

Issue

1

fYear

2003

fDate

2/1/2003 12:00:00 AM

Firstpage

49

Lastpage

51

Abstract

Magneto-transport studies in an n-i-n doped GaAs/AlAs/Ga(AsN) heterostructure are described. This system acts as a resonant-tunnelling diode in which electrons can tunnel through the N-induced states in the Ga(AsN) layer. Magneto-tunnelling spectroscopy with magnetic fields parallel and perpendicular to the current direction is used to probe the nature, band-like or impurity-like, of the N states. The data indicate that the electron wavefunction of the N states is strongly localised and extends over distances smaller than 1.8 nm.

Keywords

III-V semiconductors; Zeeman effect; aluminium compounds; gallium arsenide; gallium compounds; gyromagnetic effect; resonant tunnelling diodes; tunnelling spectroscopy; 1.8 nm; Ga(AsN) alloys; GaAs-AlAs-Ga(AsN); N states; N-induced states; band-like states; current direction; electron tunnelling; electron wavefunction; impurity-like states; magnetic fields; magneto-transport studies; magneto-tunnelling spectroscopy; n-i-n doped GaAs/AlAs/Ga(AsN) heterostructure; nitrogen clusters; resonant-tunnelling diode; strongly localised;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20030036

Filename

1193693