Title :
III-V-N-related quantum structures for 1.5 μm emission
Author :
Suemune, I. ; Uesugi, K. ; Ganapathy, S. ; Zhang, X.Q. ; Kurimoto, M. ; Kim, B.J. ; Seong, T.-Y. ; Machida, H. ; Shimoyama, N.
Author_Institution :
Res. Inst. for Electron. Sci., Hokkaido Univ., Sapporo, Japan
fDate :
2/1/2003 12:00:00 AM
Abstract :
Two kinds of III-V-N related quantum structures grown on GaAs are proposed, which have the capability to emit in the 1.5 μm wavelength range. GaAsNSe is a new quaternary with high residual electron concentrations. It is shown that GaAsNSe/GaAs superlattices, with structural optimisation, give bright luminescence around 1.5 μm at room temperature. A second structure is InAs quantum dots (QDs) grown on [001] GaAs. Instead of a conventional GaAs capping layer, a GaNAs strain-compensating layer (SCL) is proposed to minimise net compressive strain induced by InAs QDs. The application of a GaNAs SCL to cap InAs QDs improves the homogeneity and optical quality of the InAs QDs by the compensation of net strain. It is shown that 1.5 μm emission from InAs QDs is made possible by increasing the N composition in the GaNAs SCL.
Keywords :
gallium arsenide; gallium compounds; infrared sources; optimisation; photoluminescence; semiconductor superlattices; 1.5 μm emission; 1.5 micron; GaAs; GaAsNSe; GaAsNSe-GaAs; GaAsNSe/GaAs superlattices; GaNAs; GaNAs strain-compensating layer; III-V-N-related quantum structures; InAs; InAs QDs; InAs quantum dots; N composition; bright luminescence; high residual electron concentrations; homogeneity; net compressive strain minimisation; net strain compensation; optical quality; quaternary; room temperature; structural optimisation;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20030037
