Structure optimisation of 1.3 μm (GaIn)(NAs)/GaAs in-plane lasers

Author

Sarzala, R.P. ; Mackowiak, P. ; Wasiak, M. ; Czyszanowski, T. ; Nakwaski, W.

Author_Institution

Inst. of Phys., Lodz Tech. Univ., Poland

Volume

150

Issue

1

fYear

2003

fDate

2/1/2003 12:00:00 AM

Firstpage

56

Lastpage

58

Abstract

The comprehensive three-dimensional fully self-consistent model of the 1.3 μm in-plane stripe-geometry (GaIn)(NAs)/GaAs diode laser has been applied to optimise its structure and to simulate its continuous-wave (CW) performance characteristics at and above room temperature (RT). To reduce the RT CW lasing threshold, optimal value of the laser stripe width has been found to be about 9 μm. The current-spreading part of the p-type cladding layer below etched areas on both sides of the mesa should be as thin as possible for technological reasons. For a 130 K temperature increase over RT (= 300 K), the T₀ laser parameter has been determined to be 122 K. Its value is steadily reduced from 130 K (just above RT) to 116 K (at around 400 K).

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser theory; laser transitions; optimisation; quantum well lasers; ridge waveguides; semiconductor device models; waveguide lasers; (GaIn)(NAs)-GaAs; 1.3 μm (GaIn)(NAs)/GaAs in-plane lasers; 1.3 micron; 116 K; 122 K; 130 K; 300 K; 3D fully self-consistent model; 400 K; CW performance characteristics; RT CW lasing threshold; above room temperature; current-spreading part; diode laser; etched areas; in-plane stripe-geometry; laser parameter; laser stripe width; mesa; optimal value; p-type cladding layer; quantum well laser; ridge-waveguide laser diode; structure; structure optimisation;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20030040

Filename

1193695