Title :
Bi-directional field effect light emitting and absorbing heterojunction with Ga0.8In0.2N0.015As0.985 at 1250 nm
Author :
Wah, J.Y. ; Loubet, N. ; Potter, R.J. ; Mazzucato, S. ; Arnoult, A. ; Carrére, H. ; Bedel, E. ; Marie, X. ; Balkan, N.
Author_Institution :
Dept. of Electron. Syst. Eng., Essex Univ., Colchester, UK
fDate :
2/1/2003 12:00:00 AM
Abstract :
The basic operation of a novel GaInNAs/GaAs based light emitting/absorbing device operating at 1250 nm is described. The device is a bi-directional field effect light emitting and absorbing heterojunction (BiFEEAH), which can simultaneously emit and detect light. This feature makes it possible to construct a wavelength converter, where one end of the device absorbs incoming light and the other end emits light at a different wavelength. The current device consists of a simple GaAs p-i-n structure, containing a single 90 Å GaInNAs quantum well in its intrinsic region. This is fabricated into a four contact device with separate n and p conducting channels.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared detectors; light emitting devices; optical wavelength conversion; p-n heterojunctions; photodetectors; semiconductor quantum wells; 1250 nm; 90 angstrom; Ga0.8In0.2N0.015As0.985; GaAs p-i-n structure; GaInNAs quantum well; GaInNAs-GaAs; GaInNAs/GaAs based light emitting/absorbing device; bi-directional field effect light emitting absorbing heterojunction; bi-directional field effect light emitting and absorbing heterojunction; four contact device; intrinsic region; light emitting devices; n conducting channels; p conducting channels; photodetectors; wavelength converter;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20030051
