Time resolved PL study of GaInNAs quantum wells

Author

Potter, R.J. ; Balkan, N. ; Marie, X. ; Senes, M. ; Carrère, H. ; Arnoult, A. ; Fontaine, C.

Author_Institution

Dept. of Electron. Syst. Eng., Essex Univ., Colchester, UK

Volume

150

Issue

1

fYear

2003

fDate

2/1/2003 12:00:00 AM

Firstpage

75

Lastpage

76

Abstract

Time resolved photoluminescence (PL) has been used to investigate the low-temperature emission kinetics of GaInNAs and InGaAs quantum wells (QWs). The emission from InGaAs QWs remains stable over time; in contrast a clear red-shift of up to 20 meV is observed in the GaInNAs emission peak over a time period of 200-300 ps. This red-shift is interpreted in terms of trapping of excited carriers into localised excitonic states within the GaInNAs material. The presence of localised tail states is further supported by steady-state PL measurements; at low temperatures, a low-energy tail appears and a characteristic S-shape temperature dependence is observed in the emission energy.

Keywords

III-V semiconductors; electron traps; excited states; gallium arsenide; gallium compounds; indium compounds; photoluminescence; red shift; semiconductor quantum wells; time resolved spectra; 20 meV; 200 to 300 ps; GaInNAs; GaInNAs emission peak; GaInNAs material; GaInNAs quantum wells; InGaAs; InGaAs QWs; InGaAs quantum wells; characteristic S-shape temperature dependence; emission energy; excited carriers trapping; localised excitonic states; localised tail states; low temperatures; low-energy tail; low-temperature emission kinetics; red-shift; steady-state PL measurements; time period; time resolved photoluminescence;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20030050

Filename

1193700