Title :
1.55 μm monolithic GaInNAs semiconductor saturable absorber
Author :
Jouhti, T. ; Konttinen, J. ; Karirinne, S. ; Okhotnikov, O.G. ; Pessa, M.
Author_Institution :
Optoelectronics Res. Centre, Tampere Univ. of Technol., Finland
fDate :
2/1/2003 12:00:00 AM
Abstract :
The paper describes the first monolithic GaAs-based semiconductor saturable absorber made for operation at 1.55 μm. An epitaxially grown absorber mirror in the GaInNAs/GaAs system was successfully used to mode-lock an erbium-doped fibre laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.3-1.55 μm wavelength range.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser mirrors; laser mode locking; optical saturable absorption; semiconductor quantum wells; 1.3 to 1.55 micron; 1.55 micron; GaInNAs; GaInNAs/GaAs system; epitaxially grown absorber mirror; erbium-doped fibre laser mode locking; monolithic GaInNAs semiconductor saturable absorber; nonlinear optical devices; physical properties;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20030049
