Measured DC performance of large arrays of silicon field emitters

Author

Palmer, W. Devereux ; Mancusi, Joseph E. ; Ball, Christian A. ; Joines, William T. ; McGuire, Gary E. ; Temple, Dorota ; Vellenga, David G. ; Yadon, Lindsey

Author_Institution

Electron. Technol. Div., MCNC, Research Triangle Park, NC, USA

Volume

41

Issue

10

fYear

1994

fDate

10/1/1994 12:00:00 AM

Firstpage

1866

Lastpage

1870

Abstract

Large arrays of silicon field emitters are being produced at MCNC for use in RF and microwave amplifiers and other high-intensity electron beam source applications. Significant levels of both total emitted current (up to 7 mA) and current density (7 A/cm²) are obtained using gate electrode potentials less than 250 V with emission efficiencies as high as 99%. Large arrays of field emitters are operated at 100% duty cycle for over 18 hours. Data from devices with 1197 and 232 630 tips are presented, along with electrical yield statistics for arrays of other sizes

Keywords

elemental semiconductors; silicon; vacuum microelectronics; 18 hour; 250 V; 7 mA; 99 percent; DC performance; MCNC; RF amplifiers; Si; current density; duty cycle; electrical yield statistics; emission efficiencies; gate electrode potentials; high-intensity electron beam source applications; large arrays; microwave amplifiers; silicon field emitters; total emitted current; Current density; Electrodes; Electron beams; Field emitter arrays; Microwave amplifiers; Microwave antenna arrays; Radio frequency; Radiofrequency amplifiers; Silicon; Statistics;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.324600

Filename

324600