Vertical cavity surface emitting lasers with 21% efficiency by metalorganic vapor phase epitaxy

Author

Lear, K.L. ; Schneider, R.P. ; Choquette, K.D. ; Kilcoyne, S.P. ; Figiel, J.J. ; Zolper, J.C.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

6

Issue

9

fYear

1994

Firstpage

1053

Lastpage

1055

Abstract

Proton implanted, vertical cavity top-surface emitting lasers exhibit the highest single-mode and multi-mode output powers, highest power conversion efficiency, and lowest threshold voltage for such devices reported to date. These lasers use new mirror grading designs that are enabled by metalorganic vapor phase epitaxy´s capabilities of alloy grading and carbon doping. The results validate this growth technology by exceeding the previous best results which were based on molecular beam epitaxy.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 21 percent; InGaAs-GaAs-AlGaAs; alloy grading; carbon doping; growth technology; metalorganic vapor phase epitaxy; mirror grading designs; multi-mode output powers; power conversion efficiency; proton implanted; single-mode; threshold voltage; top-surface emitting lasers; vertical cavity surface emitting lasers; Epitaxial growth; Mirrors; Optical design; Power conversion; Power generation; Power lasers; Protons; Surface emitting lasers; Threshold voltage; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.324666

Filename

324666