Title :
High speed performance of 2-D vertical-cavity laser diode arrays
Author :
Moller, B. ; Zeeb, E. ; Hackbarth, T. ; Ebeling, K.J.
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
Abstract :
We have fabricated and tested 10×10 independently addressable vertical-cavity surface-emitting laser diode arrays. Arrays with 55 μm active diameter devices show an average threshold current density of 590 A/cm2 and an excellent homogeneity of the output characteristics over the full array size with maximum CW output powers of 12 mW. Broad area laser diodes with active diameters of 75 μm reach output powers of 18 mW for CW operation and 180 mW under pulsed conditions. Small-signal modulation bandwidths are beyond 10 and 8 GHz for the 55 and 75 μm devices, respectively.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser cavity resonators; semiconductor laser arrays; semiconductor lasers; 10 GHz; 12 mW; 180 mW; 2D vertical-cavity laser diode arrays; 3 GHz; 55 mum; 75 mum; CW operation; InGaAs quantum well lasers; InGaAs-AlGaAs; active diameter devices; average threshold current density; broad area laser diodes; excellent homogeneity; full array size; high speed performance; independently addressable; maximum CW output powers; output characteristics; output powers; pulsed conditions; small-signal modulation bandwidths; vertical-cavity surface-emitting laser diode arrays; Bandwidth; Diode lasers; Gallium arsenide; Gold; Optical arrays; Optical pulses; Power generation; Semiconductor laser arrays; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
