Title :
Monolithic serial InGaAs-GaAs-AlGaAs laser diode arrays
Author :
Han, H. ; Holehouse, N. ; Forbes, D.V. ; Coleman, J.J.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
Top-contact monolithic serially-biased InGaAs-GaAs-AlGaAs (/spl lambda//spl sim/0.93 μm) broad area strained-layer quantum well laser arrays have been fabricated on a semi-insulating GaAs substrate. The laser array consists of four individual laser diodes and operates up to 2.8 W at 3.6 A (supply limited) per uncoated facet under pulsed conditions (15 kHz, 2 μs). The threshold current is /spl sim/0.5 A, and the peak slope efficiency and the peak electrical-to-optical conversion efficiency of an individual laser element are /spl sim/0.53 W/A and 14%, respectively. The near-field intensity distribution is shown to be broad enough to fill the entire active region under the p-metal stripe (125 μm) of the individual laser diodes at high current levels.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor laser arrays; semiconductor lasers; 0.5 A; 0.93 mum; 1.5 kHz; 125 mum; 14 percent; 2 mus; 2.8 W; 3.6 A; InGaAs-GaAs-AlGaAs; broad area strained-layer quantum well laser arrays; entire active region; high current levels; individual laser diodes; individual laser element; laser diodes; near-field intensity distribution; p-metal stripe; peak electrical-to-optical conversion efficiency; peak slope efficiency; pulsed conditions; semi-insulating GaAs substrate; supply limited; threshold current; top-contact monolithic serially-biased laser diode arrays; uncoated facet; Chemical lasers; Diode lasers; Gallium arsenide; Laser radar; Optical arrays; Power lasers; Pump lasers; Quantum well lasers; Semiconductor laser arrays; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
