Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy

Author

Lammert, R.M. ; Cockerill, T.M. ; Forbes, D.V. ; Smith, G.M. ; Coleman, J.J.

Author_Institution

Microelectron. Lab., Illinois Univ., Urbana, IL, USA

Volume

6

Issue

9

fYear

1994

Firstpage

1073

Lastpage

1075

Abstract

Strained-layer InGaAs-GaAs-AlGaAs single quantum well buried heterostructure lasers grown by selective-area MOCVD are described. Threshold currents of 2.65 mA for an uncoated device and 0.97 mA for a coated device have been obtained. A peak optical output power of 170 mW per uncoated facet for a device with a 4 μm active region width was also achieved. Peak emissions wavelengths range from 0.956 to 1.032 μm.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 0.956 to 1.032 mum; 0.97 mA; 170 mW; 2.65 mA; 4 mum; InGaAs-GaAs-AlGaAs; active region width; coated device; peak emissions wavelengths; peak optical output power; selective-area MOCVD; selective-area epitaxy; single quantum well lasers; strained-layer; submilliampere threshold buried-heterostructure single quantum well lasers; threshold currents; uncoated device; uncoated facet; Epitaxial growth; Gallium arsenide; Geometrical optics; Indium gallium arsenide; Laser theory; MOCVD; Optical device fabrication; Quantum well lasers; Silicon compounds; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.324672

Filename

324672