Title :
Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQW ridge-waveguide lasers
Author :
Ralston, J.D. ; Weisser, S. ; Eisele, K. ; Sah, R.E. ; Larkins, E.C. ; Rosenzweig, J. ; Fleissner, J. ; Bender, K.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
Modulation bandwidths of 24 GHz (I/sub bias/=25 mA) and 33 GHz (I/sub bias/=65 mA) are demonstrated for 3×100 μm2 In/sub 0.35/Ga/sub 0.65/As/GaAs multiple quantum well ridge-waveguide lasers with undoped and p-doped active regions, respectively. These performance enhancements have been achieved both by lowering the growth temperature of the high-Al-mole-fraction cladding layers and by utilizing short-cavity devices, fabricated with dry-etched facets using chemically-assisted ion-beam etching. Both the undoped and p-doped lasers also demonstrate modulation current efficiency factors exceeding 5 GHz/mA12/, the best reported results for any semiconductor laser.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; optical modulation; rectangular waveguides; semiconductor lasers; 33 GHz; 65 mA; In/sub 0.35/Ga/sub 0.65/As/GaAs multiple quantum well ridge-waveguide lasers; InGaAs-GaAs-AlGaAs; InGaAs/GaAs/AlGaAs pseudomorphic MQW ridge-waveguide lasers; chemically-assisted ion-beam etching; dry-etched facets; growth temperature; high-Al-mole-fraction cladding layers; low-bias-current direct modulation; modulation bandwidths; modulation current efficiency factors; p-doped active regions; performance enhancements; semiconductor laser; short-cavity devices; undoped active regions; Bandwidth; Chemical lasers; Chirp modulation; Digital modulation; Gallium arsenide; Indium gallium arsenide; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
