Title :
Loss reduction in InGaAs/InGaAlAs quantum well electron transfer waveguides using ion implantation
Author :
Zucker, J.E. ; Divine, M.D. ; Chang, T.Y. ; Sauer, N.J.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
We demonstrate that phosphorous ion implantation is an effective means of blue-shifting the absorption edge in InGaAs/InGaAlAs barrier, reservoir and quantum well electron transfer structures (BRAQWETS). The electroabsorption peak is wavelength-shifted by 100 nm after implant, with a complete recovery of the electroabsorption magnitude after an appropriate rapid thermal anneal cycle. Good electrical characteristics are also maintained after implant and anneal. We apply this technique to loss reduction for BRAQWETS waveguide devices. At 1.523 mm, the implant and anneal results in a decrease of rib waveguide propagation loss from 79.4 dB/mm to 6.2 dB/mm.<>
Keywords :
III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; integrated optics; ion implantation; optical losses; optical modulation; optical waveguides; semiconductor quantum wells; 1.523 nm; BRAQWETS; BRAQWETS waveguide devices; InGaAs-InGaAlAs; InGaAs/InGaAlAs quantum well electron transfer waveguides; absorption edge; barrier/reservoir/quantum well electron transfer structures; blue-shift; electroabsorption magnitude; electroabsorption peak; good electrical characteristics; ion implantation; loss reduction; phosphorous ion implantation; rapid thermal anneal cycle; rib waveguide propagation loss; wavelength-shifted; Absorption; Electric variables; Electrons; Implants; Indium gallium arsenide; Ion implantation; Optical waveguides; Rapid thermal annealing; Reservoirs; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
