Loss reduction in InGaAs/InGaAlAs quantum well electron transfer waveguides using ion implantation

We demonstrate that phosphorous ion implantation is an effective means of blue-shifting the absorption edge in InGaAs/InGaAlAs barrier, reservoir and quantum well electron transfer structures (BRAQWETS). The electroabsorption peak is wavelength-shifted by 100 nm after implant, with a complete recovery of the electroabsorption magnitude after an appropriate rapid thermal anneal cycle. Good electrical characteristics are also maintained after implant and anneal. We apply this technique to loss reduction for BRAQWETS waveguide devices. At 1.523 mm, the implant and anneal results in a decrease of rib waveguide propagation loss from 79.4 dB/mm to 6.2 dB/mm.<>