Title :
An ultra-low noise cryogenic Ka-Band InGaAs/InAlAs/InP HEMT front-end receiver
Author :
Lai, R. ; Bautista, J.J. ; Fujiwara, B. ; Tan, K.L. ; Ng, G.I. ; Dia, R.M. ; Streit, D. ; Liu, P.H. ; Freudenthal, A. ; Laskar, J. ; Pospieszalski, M.W.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
We present here the design and performance of a 4-stage Ka-band cryogenic amplifier using a front-end 0.1-μm gate length InP HEMT. The amplifier demonstrated 20-25 K uncorrected noise temperature (/spl sim/0.3-dB noise figure) from 31-33 GHz with 30-33 dB associated gain at 12 K ambient temperature. To date, this is the best reported HEMT cryogenic amplifier performance at this frequency band and is a factor of two improvement in noise temperature compared to previous designs.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistor circuits; gallium arsenide; high electron mobility transistors; indium compounds; low-temperature techniques; microwave amplifiers; radio receivers; semiconductor device noise; solid-state microwave circuits; 0.1 micron; 0.3 dB; 12 K; 30 to 33 dB; 31 to 33 GHz; 4-stage Ka-band cryogenic amplifier; InGaAs-InAlAs-InP; InGaAs/InAlAs/InP HEMT; front-end receiver; noise temperature; ultra-low noise; Cryogenics; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; Noise figure; Radiofrequency amplifiers; Temperature;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
