A Fully Integrated 5 GHz Low-Voltage LNA Using Forward Body Bias Technology

Author

Chang, Chieh-Pin ; Chen, Ja-Hao ; Wang, Yeong-Her

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan

Volume

19

Issue

3

fYear

2009

fDate

3/1/2009 12:00:00 AM

Firstpage

176

Lastpage

178

Abstract

A fully integrated 5 GHz low-voltage and low-power low noise amplifier (LNA) using forward body bias technology, implemented through a 0.18 mum RF CMOS technology, is demonstrated. By employing the current-reused and forward body bias technique, the proposed LNA can operate at a reduced supply voltage and power consumption. The proposed LNA delivers a power gain (S21) of 10.23 dB with a noise figure of 4.1 dB at 5 GHz, while consuming only 0.8 mW dc power with a low supply voltage of 0.6 V. The power consumption figure of merit (FOM₁) and the tuning-range figure of merit (FOM₂) are optimal at 12.79 dB/mW and 2.6 mW^-1, respectively. The chip area is 0.89times0.89 mm².

Keywords

CMOS integrated circuits; low noise amplifiers; low-power electronics; radiofrequency integrated circuits; RF CMOS technology; forward body bias technology; frequency 5 GHz; gain 10.23 dB; low-voltage LNA; low-voltage low noise amplifier; noise figure 4.1 dB; power 0.8 mW; power consumption figure of merit; size 0.18 micron; voltage 0.6 V; CMOS; forward body bias; low noise amplifier (LNA); low voltage;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2009.2013745

Filename

4796234