DocumentCode
1181464
Title
Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates
Author
Pei, Y. ; Chen, Z. ; Brown, D. ; Keller, S. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA
Volume
30
Issue
4
fYear
2009
fDate
4/1/2009 12:00:00 AM
Firstpage
328
Lastpage
330
Abstract
Deep-submicrometer AlGaN/GaN HEMTs with integrated slant field plates have been fabricated. Simulation showed this technology had the ability to minimize both the dc-RF dispersion and parasitic capacitance. Prototype device results demonstrated an excellent millimeter-wave power density of 4.9 W/mm with a power-added efficiency of 45% at 30 GHz at a drain bias of 30 V.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; millimetre wave field effect transistors; wide band gap semiconductors; AlGaN-GaN; frequency 30 GHz; voltage 30 V; Gallium nitride; high-electron mobility transistors; millimeter wave; power; slant field plate;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2014790
Filename
4796301
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