Title :
Kink-like effect in long n-channel twin-gate fully-depleted SOI MOSFETs
Author_Institution :
Lab. de Microelectronique, Louvain-la-Neuve
fDate :
8/18/1994 12:00:00 AM
Abstract :
Twin-gate structures consisting of the series combination of two short-channel SOI MOSFETs of different lengths with a common gate have previously demonstrated kink-free and very flat output characteristics. The authors observe and explain that when using long-channel fully-depleted twin-gates a kink-like effect reappears and seriously damages the output conductance
Keywords :
characteristics measurement; insulated gate field effect transistors; semiconductor technology; semiconductor-insulator boundaries; SOI MOSFETs; flat output characteristics; kink-like effect; n-channel twin-gate fully-depleted devices; output conductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940992
