A high-gain, low-noise 1/2- mu m pulse-doped pseudomorphic HEMT

Author

Huang, John C. ; Zaitlin, M. ; Hoke, W. ; Adlerstein, Michael ; Lyman, P. ; Saledas, P. ; Jackson, Gordon ; Tong, E. ; Flynn, G.

Author_Institution

Raytheon Res. Div., Lexington, MA, USA

Volume

10

Issue

11

fYear

1989

Firstpage

511

Lastpage

513

Abstract

A 1/2- mu m gate-length pulse-doped pseudomorphic high-electron-mobility transistor (HEMT) grown by MBE, which exhibits a current-gain cutoff frequency of 62 GHz, is discussed. The maximum available gain cutoff frequency was greater than 150 GHz. A minimum noise figure of 0.85 dB and associated gain of 14 dB were measured at 10 GHz. Tuned small-signal gain in a waveguide-to-microstrip test fixture at 44 GHz was 7.6 dB. When the HEMT was tuned for power, 260 mW/mm with 5-dB gain and 17% power-added efficiency were obtained at 44 GHz. These results suggest that a 1/2- mu m pseudomorphic HEMT is a viable candidate for Q-band applications.<>

Keywords

III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.5 micron; 0.85 dB; 10 GHz; 14 dB; 150 GHz; 17 percent; 44 GHz; 5 dB; 62 GHz; 7.6 dB; InGaAs-AlGaAs; MBE; Q-band applications; current-gain cutoff frequency; gain; minimum noise figure; power-added efficiency; pulse-doped pseudomorphic HEMT; small-signal gain; waveguide-to-microstrip test fixture; Cutoff frequency; Electron mobility; FETs; Fixtures; Gallium arsenide; HEMTs; Lithography; Molecular beam epitaxial growth; Optical buffering; PHEMTs;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.43120

Filename

43120